2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=70Vdc,VGS
=0Vdc)
IDSS
—
—
10
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
?Adc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 400
?Adc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1700 mAdc, Measured in Functional Test)
VGS(Q)
2.4
3.1
3.9
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=4.4Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1700 mA, Pout
= 75 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
?5MHzOffset.
Power Gain
Gps
17.5
18.6
20.0
dB
Drain Efficiency
?D
36.0
38.5
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.5
5.9
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.1
--35.0
dBc
Input Return Loss
IRL
—
-- 1 4
-- 9
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1700 mA, Pout
=75WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
?5MHzOffset.
Frequency
Gps
(dB)
?D
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz
18.8
36.0
6.3
--39.5
-- 1 6
940 MHz
18.7
37.0
6.2
--38.6
-- 1 8
960 MHz
18.6
38.5
5.9
--37.1
-- 1 4
1. Part internally matched both on input and output.
(continued)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF9002NR2
MOSFET RF N-CHAN 26V 2W 16-PFP
MRF9030NBR1
IC MOSFET RF N-CHAN TO272-2
MRF9045LR1
IC MOSFET RF N-CHAN NI-360
MRF9045NBR1
IC MOSFET RF N-CHAN TO272-2
MRF9060LR5
IC MOSFET RF N-CHAN NI-360
MRF9080LR3
IC MOSFET RF N-CHAN NI-780
MRF9120LR3
IC MOSFET RF N-CHAN NI-860
MRFE6P3300HR5
MOSFET RF N-CH 300W 32V NI-860C3
相关代理商/技术参数
MRF8S9260HSR5
功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002NR2
功能描述:射频MOSFET电源晶体管 FR PWR FET ARRAY PFP-16N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002R2
制造商:MOT 功能描述:_
MRF9002RS
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR ARRAY
MRF901
制造商:Motorola Inc 功能描述:
MRF9011
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor
MRF9011L
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The Rf Line NPN Silicon High-Frequency Transistor
MRF9011LT1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor